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DMN2065UW
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 1.8V
Pulsed Drain Current (10us pulse, duty cycle=1%)
Maximum Body Diode Forward Current (Note 4)
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
2.8
2.3
3.1
2.6
2.2
1.7
2.4
1.9
30
1.2
A
A
A
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Symbol
P D
Value
0.43
Units
W
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
T J, T STG
296
252
0.7
178
151
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
20
-
-
V
V GS = 0V, I D = 1mA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T c = 25°C
I DSS
I GSS
-
-
-
-
1
±1
μ A
μ A
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.35
-
1.0
V
V DS = V GS , I D = 250 μ A
-
52
56
V GS = 4.5V, I D = 2A
Static Drain-Source On-Resistance
R DS (ON)
-
-
59
60
65
93
m Ω
V GS = 2.5V, I D = 2A
V GS = 1.8V, I D = 1A
-
75
140
V GS = 1.5V, I D = 0.5A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
-
7
0.7
-
1.0
S
V
V DS = 5V, I D = 3.8A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
400.0
73.8
65.6
5.4
0.7
1.4
3.5
9.7
23.8
7.2
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 6A
V DD = 10V, V GS = 5V,
R L = 1.7 ? , R G = 6 ? ,
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2065UW
Document number: DS35554 Rev. 1 – 2
2 of 6
www.diodes.com
October 2011
? Diodes Incorporated
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